20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 the rf line npn silicon rf power transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 mhz frequency range. ? guaranteed performance at 400 mhz, 28 vdc output power = 10 watts power gain = 12 db min efficiency = 50% min ? 100% tested for load mismatch at all phase angles with 30:1 vswr ? gold metallization system for high reliability ? computer-controlled wirebonding gives consistent input impedance maximum ratings MRF321 10w, 400mhz rf power transistor npn silicon rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous ? peak total device dissipation @ ta = 25c (1) derate above 25"c storage temperature range symbol vceo vcbo vebo lc pd tstg value 33 60 4.0 1.1 1.5 27 160 -65to+150 unit vdc vdc vdc adc watts mw/"c c case 244-04, thermal characteristics characteristic thermal resistance, junction to case symbol rbjc max 6.4 unit c/w electrical characteristics (tc = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector-emitter breakdown voltage (lc = 20 madc, ib = 0) collector-emitter breakdown voltage (lc = 20 madc, vbe = 0) collector-base breakdown voltage (lc = 20 madc, ie = 0) emitter-base breakdown voltage (ie = 2.0 madc, lc = 0) collector cutoff current (vcb = 30 vdc, ie = 0) v(br)ceo v(br)ces v(br)cbo v(br)ebo icbo 33 60 60 4.0 ? ? ? ? ? ? ? ? ? ? 1,0 vdc vdc vdc vdc madc on characteristics dc current gain (lc = 500ma, vce = 5.0vdc) hfe 20 ? 80 ? note: (continued) 1. this device is designed for rf operation. the total device dissipation rating applies only when the device is operated as an rf amplifier.
electrical characteristics ? continued (tc = 25c unless otherwise noted.) characteristic 1 symbol min typ max | unit dynamic characteristics output capacitance (vcb = 28 vdc, ie = 0, f = 1 .0 mhz) cob ? 10 12 pf functional tests (figure 1) common-emitter amplifier power gain (vcc = 28 vdc, pou, = 10 w, f = 400 mhz) collector efficiency (vcc = 28 vdc, pout = 10 w, f = 400 mhz) load mismatch (vcc = 28 vdc, pout = 10 w, f = 400 mhz, vswr = 30:1 all phase angles) gpe '1 v 12 50 13 60 ? ? db % no degradation in output power input / q 28v output c1, c2, c3? 1.0-20 pf johanson trimmer (jmc 5501) c3, c4 ? 47 pf atc chip capacitor c5, c10 ? 0.1 uf erie redcap c7 ?0.5-10 pf johanson trimmer (jmc 5201) c8 ? 0.018 uf vitramon chip capacitor c9 ? 200 pf unelco capacitor c11.c12 ? 680 pf feedthru c13 ? 1.0 uf, 50 volt tantalum capacitor d1 ? 1n4001 l1 ? 0.33 (j.h molded choke with ferroxcube bead (ferroxcube 56-590-65/4b) on ground end of coil l2 ? 4 turns #20 enamel. 1/8" id l3 ? 6 turns #20 enamel, 1/4" id l4 ? ferroxcube vk200-19/4b r1 ?5.1 n, 1/4 watt r2 ? 120 2, 1.0 watt r3 ?20s'j, 1/2 watt r4 ? 47 2, 1/2 watt z1 ? microstrip 0.1" w x 1.35" l z2 ? microstrip 0.1" w x 0.55" l z3 ? microstrip 0.1" w x 0.8" l z4 ? microstrip 0.1" w x 1.75" l board ? glass teflon, er = 2.56, t = 0.062" input/output connectors ? type n figure 1. 400 mhz test circuit schematic
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